Infineon IPB120N10S4-05: High-Performance 100V OptiMOS 5 Power MOSFET

The relentless pursuit of higher efficiency, greater power density, and enhanced reliability in power electronics drives continuous innovation in semiconductor technology. At the forefront of this evolution is Infineon Technologies' OptiMOS™ 5 power MOSFET family, with the IPB120N10S4-05 standing out as a premier solution for demanding applications requiring robust 100V performance.

Engineered with Infineon's advanced trench technology, the IPB120N10S4-05 is designed to set new benchmarks. Its key strength lies in its exceptionally low figure-of-merit (FOM), characterized by an ultra-low on-state resistance (R DS(on)) of just 1.2 mΩ (max. at 10 V V GS) combined with outstanding switching performance. This optimal balance minimizes both conduction and switching losses, which is paramount for achieving high efficiency in power conversion systems.

The benefits of these characteristics are immediately tangible in real-world applications. In synchronous rectification stages of switch-mode power supplies (SMPS) and DC-DC converters, this MOSFET significantly reduces energy waste, leading to cooler operation and the potential for smaller heatsinks. For motor control and drive systems in industrial automation, robotics, and e-mobility, the device enables more compact and powerful designs. Furthermore, its high current handling capability (up to 120A continuous drain current) makes it an ideal candidate for high-current switching in power tools and inverter systems.

Beyond its electrical prowess, the IPB120N10S4-05 is offered in the space-saving D 2PAK (TO-263) package. This popular surface-mount package provides an excellent thermal performance-to-footprint ratio, aiding designers in their quest for increased power density without compromising on thermal management. The package is also designed for low parasitic inductance, further supporting clean and efficient high-speed switching.

The device also incorporates robust body-diode characteristics and a high avalanche ruggedness, ensuring operational resilience and long-term reliability in harsh environments where voltage spikes and overload conditions may occur. This makes it a dependable choice for automotive and industrial applications that demand the highest quality standards.

ICGOO Summary (ICGOODFIND): The Infineon IPB120N10S4-05 is a benchmark 100V power MOSFET that delivers top-tier efficiency and power density. Its winning combination of ultra-low R DS(on), superior switching characteristics, and a thermally efficient package makes it an optimal choice for designers of high-performance SMPS, DC-DC converters, and motor drives seeking to maximize system performance and reliability.

Keywords: OptiMOS 5, Low RDS(on), High-Efficiency, Power Density, D2PAK.